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absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -75* i d @ v gs = -12v, t c = 100c continuous drain current -63 i dm pulsed drain current ? -300 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? -75 a e ar repetitive avalanche energy ? 30 mj dv/dt p eak diode recovery dv/dt ? 2.1 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 ( for 5s ) weight 3.3 ( typical ) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened irhna597064 power mosfet surface mount (smd-2) 06/17/03 www.irf.com 1 60v, p-channel technology product summary part number radiation level r ds(on) i d irhna597064 100k rads (si) 0.015 ? -75a* IRHNA593064 300k rads (si) 0.015 ? -75a* features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page smd-2 * current is limited by package pd - 94604a
irhna597064 pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.42 r thj-pcb junction-to-pc board ? 1.6 ? soldered to a 2? square copper-clad board c/w note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? -75* i sm pulse source current (body diode) ? ? ? -300 v sd diode forward voltage ? ? -5.0 v t j = 25c, i s = -75a, v gs = 0v ? t rr reverse recovery time ? ? 200 ns t j = 25c, i f =-75a, di/dt -100a/ s q rr reverse recovery charge ? ? 2.0 cv dd -25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -60 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.064 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.015 ? v gs = -12v, i d = -63a resistance v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 40 ? ? s ( )v ds = -25v, i ds = -63a ? i dss zero gate voltage drain current ? ? -10 v ds = -48v ,v gs =0v ? ? -25 v ds = -48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 150 v gs =-12v, i d = -75a q gs gate-to-source charge ? ? 65 nc v ds = -30v q gd gate-to-drain (?miller?) charge ? ? 60 t d (on) turn-on delay time ? ? 30 v dd = -30v, i d = -75a, t r rise time ? ? 100 v gs = -12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 100 t f fall time ? ? 100 l s + l d total inductance ? 2.8 ? c iss input capacitance ? 7022 ? v gs = 0v, v ds = -25v c oss output capacitance ? 2897 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 267 ? na ? ? nh ns a measured from the center of drain pad to center of source pad * current is limited by package
www.irf.com 3 pre-irradiation irhna597064 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300krads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -60 ? -60 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs =-20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -10 ? -10 a v ds = -48v, v gs =0v r ds(on) static drain-to-source ? ? 0.015 ? 0.015 ? v gs = -12v, i d =-63a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.015 ? 0.015 ? v gs = -12v, i d =-63a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhna597064 2. part number IRHNA593064 fig a. single event effect, safe operating area v sd diode forward voltage ? ? -5.0 ? -5.0 v v gs = 0v, i s = -75a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=5v @vgs=10v @vgs=15v @vgs=20v br 37.3 285 36.8 - 60 - 60 - 60 - 60 - 60 i 59.9 345 32.7 - 60 - 60 - 60 - 45 - 25 au 82.3 357 28.5 - 60 - 60 - 60 ? ? -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 vgs vds br i au
irhna597064 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15
-i d , drain-to-source current ( ) -i d , drain-to-source current (a) !"#$ #*&' #+ , -+##+.
() -i d , drain-to-source current (a) !"#$ #*&' #+ , -+##+. -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -75a
www.irf.com 5 pre-irradiation irhna597064 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage / 0
() -i sd , reverse drain current ( ) # % &' # % &'
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irhna597064 pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - 25 50 75 100 125 150 0 20 40 60 80 100 t , case temperature ( c) -i , drain current (a) c d limited by package v ds 90% 10% v gs t d(on) t r t d(off) t f
www.irf.com 7 pre-irradiation irhna597064 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge -12 v d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v 25 50 75 100 125 150 0 200 400 600 800 1000 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -33.5a -47.4a -75a fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as v gs v dd + -
irhna597064 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = - 25v, starting t j = 25c, l= 0.17mh peak i l = - 75a, v gs = -12v ? i sd - 75a, di/dt - 360a/ s, v dd - 60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 06/03 case outline and dimensions ? smd-2

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